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kurinec santosh k. (curatore); iniewski krzysztof (curatore) - nanoscale semiconductor memories

Nanoscale Semiconductor Memories Technology and Applications

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Dettagli

Genere:Libro
Lingua: Inglese
Editore:

CRC Press

Pubblicazione: 04/2017
Edizione: 1° edizione





Note Editore

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.




Sommario

Static Random Access MemorySRAM: The Benchmark of VLSI Technology, Qingqing LiangComplete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies, Gilles Gasiot and Philippe RocheRadiation Hardened by Design SRAM Strategies for TID and SEE Mitigation, Lawrence T. ClarkDynamic Random Access MemoryDRAM Technology, Myoung Jin LeeConcepts of Capacitorless 1T-DRAM and Unified Memory on SOI, Sorin Cristoloveanu and Maryline BawedinA-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Nodes and Beyond, Francisco Gamiz, Noel Rodriguez, and Sorin CristoloveanuNovel Flash MemoryQuantum Dot-Based Flash Memories, Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter BimbergMagnetic Memory|Spin-Transfer-Torque MRAM, Kangho LeeMagnetic Domain Wall "Racetrack" Memory, Michael C. Gaidis and Luc ThomasPhase-Change MemoryPhase-Change Memory Cell Model and Simulation, Jin He, Yujun Wei, and Mansun ChanPhase-Change Memory Devices and Electrothermal Modeling, Helena Silva, Azer Faraclas, and Ali GokirmakResistive Random Access MemoryNonvolatile Memory Device: Resistive Random Access Memory, Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing SunNanoscale Resistive Random Access Memory: Materials, Devices, and Circuits, Hong Yu YuIndex










Altre Informazioni

ISBN:

9781138072640

Condizione: Nuovo
Collana: Devices, Circuits, and Systems
Dimensioni: 9.25 x 6.25 in Ø 1.00 lb
Formato: Brossura
Illustration Notes:316 b/w images, 17 tables and 83
Pagine Arabe: 448


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