Section I Nano-CMOS ModelingValidation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.orgAlejandro Rodriguez and Hasina F. HuqComparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET DeviceNabil Ashraf, Dragica Vasileska, Gilson Wirth, and Purushothaman SrinivasanImpact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET DevicesYiming LiSection II Nano-CMOS TechnologyBottom-Up Approaches for CMOS Scaling in the Nanoscale EraMrunal A. Khaderbad and V. Ramgopal RaoStudy of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus DeviceA. Srivastava and Y. MalhotraLow-Power Reliable Nano AddersAzam Beg, Mawahib Hussein Sulieman, Valeriu Beiu, and Walid IbrahimSection III Nano CapacitorsPackage-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-DielectricsHimani Sharma, P. Markondeya Raj, Parthasarathi Chakraborti, Yushu Wang, and Rao TummalaModified Carbon Nanostructures for Display and Energy StorageSivaram ArepalliProduction and Characterization of Nanoparticle Dispersions of Organic Semiconductors for Potential Applications in Organic ElectronicsMuhammad Hassan Sayyad, Fazal Wahab, Munawar Ali Munawar, Muhammad Shahid, Jamil Anwar Chaudry, Khaulah Sulaiman, Zubair Ahmad, and Abdullah Mohamed AsiriInvestigation of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS ReliabilityGang Li, Ulrik Hanke, and Xuyuan ChenSection IV Terahertz Systems and DevicesNano Antennas for Energy ConversionMario Bareiß, Andreas Hochmeister, Gunther Jegert, Gregor Koblmüller, Ute Zschieschang, Hagen Klauk, Bernhard Fabel, Giuseppe Scarpa, Wolfgang Porod, and Paolo LugliBallistic Transistor Logic for Circuit ApplicationsDavid Wolpert and Paul AmpaduSection V Single Electron Transistors and Electron Tunneling DevicesSimultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced ElectromigrationMitsuki Ito, Shunsuke Akimoto, Ryutaro Suda, and Jun-Ichi ShirakashiHigh-Resistive Tunnel Junctions for Room-Temperature-Operating Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten NanoparticlesP. Santosh Kumar Karre, Daw Don Cheam, Manoranjan Acharya, and Paul L. BergstromAxon-Inspired Communication SystemsValeriu Beiu, Liren Zhang, Azam Beg, Walid Ibrahim, and Mihai TacheElectromechanical Modeling of GNP Nanocomposites for Integrated Stress Monitoring of Electronic DevicesAlessandro Giuseppe D’Aloia, Alessio Tamburrano, Giovanni De Bellis, Jacopo Tirillò, Fabrizio Sarasini, and Maria Sabrina SartoSection VI Quantum Cellular AutomataAn HDL Model of Magnetic Quantum-Dot Cellular Automata Devices and CircuitsMarco Ottavi, Salvatore Pontarelli, Adelio Salsano, and Fabrizio LombardiRestoring Divider Design for Quantum-Dot Cellular AutomataSeong-Wan Kim and Earl E. Swartzlander, Jr.LINA-QCA: Theory, Design, and Viable Implementation StrategiesLoyd R. Hook IV and Samuel C. LeeMinimal Majority Gate Mapping of Four-Variable Functions for Quantum-Dot Cellular AutomataPeng Wang, Mohammed Niamat, and Srinivasa VemuruSection VII Memristors, Resistive Switches, and MemoryNanodevices: Describing Function and Liénard EquationAlberto DelgadoSensing and Writing Operations of Nano-Crossbar Memory ArraysAn ChenModeling of Complementary Resistive SwitchesE. Linn, S. Menzel, R. Rosezin, U. Böttger, R. Bruchhaus, and R. WaserHybrid Design of a Memory Cell Using a Memristor and Ambipolar TransistorsPilin Junsangsri and Fabrizio LombardiSpike Timing-Dependent Plasticity Using Memristors and Nano-Crystalline Silicon TFT MemoriesKurtis D. Cantley, Anand Subramaniam, and Eric M. VogelThermally Actuated Nanoelectromechanical Memory: A New Memory Concept for Spacecraft ApplicationElham Maghsoudi and Michael James MartinSection VIII Graphene Preparation and PropertiesLow-Stress Transfer of Graphene and Its Tunable Resistance by Remote Plasma Treatments in HydrogenWaileong Chen, Chia-Hao Tu, Keng-Chih Liang, Chih-Yi Liu, Chuan-Pu Liu, and Yonhua TzengHigh-Yield Dielectrophoretic Deposition and Ion Sensitivity of GraphenePengfei Li, Nan Lei, Jie Xu, and Wei XueMultilayer Graphene Grid and Nanowire Fabrication and PrintingMasudur Rahman and Michael L. NortonSection IX Graphene DevicesNanotransistors Using Graphene Interfaced with Advanced Dielectrics for High-Speed CommunicationOsama M. Nayfeh, Ki Kang Kim, and Jing KongGraphene-on-Diamond Devices and Interconnects: Carbon sp2-on-sp3 TechnologyJie Yu, Guanxiong Liu, Alexander A. Balandin, and Anirudha V. SumantGraphene Band Gap Modification via Functionalization with Metal-Bis-Arene MoleculesPaul Plachinda, David R. Evans, and Raj SolankiSection X Carbon Nanotube ApplicationsIntegrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si TechnologySten Vollebregt, Ryoichi Ishihara, Jaber Derakhshandeh, Johan van der Cingel, Hugo Schellevis, and C.I.M. BeenakkerReadout Circuit Design for MWCNT Infrared SensorsLiangliang Chen, Ning Xi, Hongzhi Chen, and King Wai Chiu LaiUse of Vertically Aligned Carbon Nanotubes for Electrochemical Double-Layer CapacitorsAdrianus I. Aria, Mélanie Guittet, and Morteza GharibSpray Deposition of Carbon Nanotube Thin FilmsAlaa Abdellah, Paolo Lugli, and Giuseppe ScarpaElectrical Control of Synthesis Conditions for Locally Grown CNTs on a Polysilicon MicrostructureKnut E. Aasmundtveit, Bao Quoc Ta, Nils Hoivik, and Einar HalvorsenSection XI Carbon Nanotube Transistor ModelingA Qualitative Comparison of Energy Band Gap Equations with a Focus on Temperature and Its Effect on CNTFETsJesus Torres and Hasina F. HuqReal-Time Quantum Simulation of Terahertz Response in Single-Walled Carbon NanotubeZuojing Chen, Eric Polizzi, and Sigfrid YngvessonSection XII Carbon Nanotube Transistor FabricationFabrication of Stable n-Type Thin-Film Transistor with Cs Encapsulated Single-Walled Carbon NanotubesToshiaki Kato, Rikizo Hatakeyama, and Yosuke OsanaiPrinting Technology and Advantage of Purified Semiconducting Carbon Nanotubes for Thin Film TransistorsHideaki Numata, Kazuki Ihara, Takeshi Saito, and Fumiyuki NiheySection XIII Random CNT Network TransistorsSolution-Processed Random Carbon Nanotube Networks Used in a Thin-Film TransistorQingqing Gong, Edgar Albert, Bernhard Fabel, Alaa Abdellah, Paolo Lugli, Giuseppe Scarpa, and Mary B. Chan-ParkAnalysis of Yield Improvement Techniques for CNFET-Based Logic GatesRehman Ashraf, Malgorzata Chrzanowska-Jeske, and Siva G. NarendraLow-Power and Metallic-CNT-Tolerant CNTFET SRAM DesignZhe Zhang and José G. Delgado-FriasSection XIV Nano-Redundant SystemsOptimized Built-In Self-Test Technique for CAEN-Based Nanofabric SystemsMaciej Zawodniok and Sambhav KundaikarAdaptive Fault-Tolerant Architecture for Unreliable Device TechnologiesNivard Aymerich, Sorin Cotofana, and Antonio RubioSection XV Nanowire FabricationGrowth and Characterization of GaAs Nanowires Grown on Si SubstratesJung-Hyun Kang, Qiang Gao, Hark Hoe Tan, Hannah J. Joyce, Yong Kim, Yanan Guo, Hongyi Xu, Jin Zou, Melodie A. Fickenscher, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, and Chennupati JagadishSynthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing ApplicationsHoang A. Tran and Shankar B. RananavareCu Silicide Nanowires: Fabrication, Characterization, and Application to Li-Ion BatteriesPoh Keong Ng, Reza Shahbazian-Yassar, and Carmen Maria LilleyHigh-Aspect-Ratio Metallic Nanowires by Pulsed ElectrodepositionMatthias Graf, Alexander Eychmüller, and Klaus-Jürgen WolterSection XVI Nanowire ApplicationsZinc Oxide Nanowires for Biosensing ApplicationsAnurag Gupta, Bruce C. Kim, Dawen Li, Eugene Edwards, Christina Brantley, and Paul RuffinAqueous Synthesis of n-/p-type ZnO Nanorods on Porous Silicon for the Application of p–n Junction DeviceEunkyung Park, Jungwoo Lee, Taehee Park,