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grasser tibor (curatore) - hot carrier degradation in semiconductor devices

Hot Carrier Degradation in Semiconductor Devices




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Dettagli

Genere:Libro
Lingua: Inglese
Editore:

Springer

Pubblicazione: 11/2014
Edizione: 2015





Trama

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. 





Sommario

Part I: Beyond Lucky Electrons.- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation.- The Energy Driven Hot Carrier Model.- Hot-Carrier Degradation in Decananometer.- Physics-based Modeling of Hot-carrier Degradation.- The Spherical Harmonics Expansion
Method for Assessing Hot Carrier Degradation.- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment.- Characterization of MOSFET Interface States Using the Charge Pumping Technique.- Part II: CMOS and Beyond.- Channel Hot Carriers in SiGe and Ge pMOSFETs.- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs.- Characterization and Modeling of High-Voltage LDMOS Transistors.- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs.- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.- Part III: Circuits.- Hot-Carrier Injection Degradation in Advanced CMOS nodes: A bottom-up approach to circuit and system reliability.- Circuit Reliability – Hot Carrier Stress of MOS-transistors in Different Fields of Application.- Reliability Simulation Models for Hot Carrier Degradation.




Autore

Tibor Grasser is an Associate Professor at the Institute for Microelectronics for Technische Universität Wien.










Altre Informazioni

ISBN:

9783319089935

Condizione: Nuovo
Dimensioni: 235 x 155 mm Ø 1025 gr
Formato: Copertina rigida
Illustration Notes:X, 517 p. 352 illus., 253 illus. in color.
Pagine Arabe: 517
Pagine Romane: x


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