Capacitance Spectroscopy of Semiconductors

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advancesin capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

Introduction to Capacitance Spectroscopy Jian V. Li and Jennifer T. Heath Admittance Spectroscopy Thomas Walter Deep-Level Transient Spectroscopy Johan Lauwaert and Samira Khelifi Capacitance-Voltage and Drive-Level-Capacitance Profiling Jennifer T. Heath Basic Techniques for Capacitance and Impedance Measurements Giorgio Ferrari and Marco Carminati Advanced Instrumentation for High-Resolution Capacitance and Impedance Measurements Giorgio Ferrari and Marco Carminati Time-Domain-Based Impedance Detection Uwe Pliquett Comparison of Capacitance Spectroscopy for PV Semiconductors Adam Halverson Capacitive Techniques for the Characterization of Organic Semiconductors Dario Natali and Mario Caironi Capacitance Spectroscopy for MOS Systems Salvador Duenas and Helena Castan Capacitance Spectroscopy in Single-Charge Devices Alessandro Crippa, Marco Tagliaferri, and Enrico Prati Scanning Capacitance Microscopy Jian V. Li and Chunsheng Jiang Probing the Dielectric Constant at the Nanoscale with Scanning Probe Microscopy Laura Fumagalli and Gabriel Gomila SPM-Based Capacitance Spectroscopy Jian V. Li, Giorgio Ferrari, and Chunsheng Jiang Scanning Microwave Microscopy Yongtao Cui and Eric Ma

Jian V. Li holds a PhD in electrical engineering from the University of Illinois at Urbana-Champaign, USA. Since 2017, hehas beenan associate professor at National Cheng Kung University, Taiwan. He specializes in the characterization of semiconductor materials and devices—especially properties concerning defects, carrier recombination, and interfaces—with capacitance spectroscopy and other electrical–optical techniques. Giorgio Ferrari obtained his PhD in electronics engineering in 2003 from the Politecnico di Milano, Italy. Since 2005, he has been anassistant professor of electronics at the Politecnico di Milano. His research concerns the development of novel integrated instrumentation to probe electrical properties of materials, devices, and biosamples at the nanoscale.