Nitride Wide Bandgap Semiconductor Material and Electronic Devices

NOTE EDITORE

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

SOMMARIO

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

AUTORE

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

ALTRE INFORMAZIONI

• Condizione: Nuovo
• ISBN: 9781498745123
• Dimensioni: 10 x 7 in Ø 1.95 lb
• Formato: Copertina rigida
• Illustration Notes: 469 b/w images and 30 tables
• Pagine Arabe: 392